TPCF8B01(TE85L,F,M Specifications

• Series:U-MOSIII
• Package:Tape & Reel (TR)Cut Tape (CT)
• Part Status:Obsolete
• FET Type:P-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):20 V
• Current - Continuous Drain (Id) @ 25°C:2.7A (Ta)
• Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
• Rds On (Max) @ Id, Vgs:110mOhm @ 1.4A, 4.5V
• Vgs(th) (Max) @ Id:1.2V @ 200µA
• Gate Charge (Qg) (Max) @ Vgs:6 nC @ 5 V
• Vgs (Max):±8V
• Input Capacitance (Ciss) (Max) @ Vds:470 pF @ 10 V
• FET Feature:Schottky Diode (Isolated)
• Power Dissipation (Max):330mW (Ta)
• Operating Temperature:150°C (TJ)
• Mounting Type:Surface Mount
• Supplier Device Package:VS-8 (2.9x1.5)
• Package / Case:8-SMD, Flat Lead