TPC8110(TE12L,Q,M) Specifications

• Series:U-MOSIII
• Package:Tape & Reel (TR)
• Part Status:Obsolete
• FET Type:P-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):40 V
• Current - Continuous Drain (Id) @ 25°C:8A (Ta)
• Drive Voltage (Max Rds On, Min Rds On):4V, 10V
• Rds On (Max) @ Id, Vgs:25mOhm @ 4A, 10V
• Vgs(th) (Max) @ Id:2V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs:48 nC @ 10 V
• Vgs (Max):±20V
• Input Capacitance (Ciss) (Max) @ Vds:2180 pF @ 10 V
• FET Feature:-
• Power Dissipation (Max):1W (Ta)
• Operating Temperature:150°C (TJ)
• Mounting Type:Surface Mount
• Supplier Device Package:8-SOP (5.5x6.0)
• Package / Case:8-SOIC (0.173", 4.40mm Width)