TPC6109-H(TE85L,FM Specifications

• Series:U-MOSIII-H
• Package:Tape & Reel (TR)Cut Tape (CT)
• Part Status:Obsolete
• FET Type:P-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):30 V
• Current - Continuous Drain (Id) @ 25°C:5A (Ta)
• Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
• Rds On (Max) @ Id, Vgs:59mOhm @ 2.5A, 10V
• Vgs(th) (Max) @ Id:1.2V @ 200µA
• Gate Charge (Qg) (Max) @ Vgs:12.3 nC @ 10 V
• Vgs (Max):±20V
• Input Capacitance (Ciss) (Max) @ Vds:490 pF @ 10 V
• FET Feature:-
• Power Dissipation (Max):700mW (Ta)
• Operating Temperature:150°C (TJ)
• Mounting Type:Surface Mount
• Supplier Device Package:VS-6 (2.9x2.8)
• Package / Case:SOT-23-6 Thin, TSOT-23-6