2SJ668(TE16L1,NQ) Specifications

• Series:U-MOSIII
• Package:Tape & Reel (TR)
• Part Status:Last Time Buy
• FET Type:P-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):60 V
• Current - Continuous Drain (Id) @ 25°C:5A (Ta)
• Drive Voltage (Max Rds On, Min Rds On):4V, 10V
• Rds On (Max) @ Id, Vgs:170mOhm @ 2.5A, 10V
• Vgs(th) (Max) @ Id:2V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs:15 nC @ 10 V
• Vgs (Max):±20V
• Input Capacitance (Ciss) (Max) @ Vds:700 pF @ 10 V
• FET Feature:-
• Power Dissipation (Max):20W (Tc)
• Operating Temperature:150°C
• Mounting Type:Surface Mount
• Supplier Device Package:PW-MOLD
• Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63