2SA949-O(TE6,F,M)

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Manufacturer Part
2SA949-O(TE6,F,M)
Manufacturer
Toshiba Electronic Devices and Storage Corporation
Description
TRANS PNP 50MA 150V TO226-3
Category
Discrete Semiconductor Products
Family
Transistors - Bipolar (BJT) - Single
Series
-
In Stock
0
Datasheets
-

2SA949-O(TE6,F,M) Specifications

  • Series:-
  • Package:Bulk
  • Part Status:Obsolete
  • Transistor Type:PNP
  • Current - Collector (Ic) (Max):50 mA
  • Voltage - Collector Emitter Breakdown (Max):150 V
  • Vce Saturation (Max) @ Ib, Ic:800mV @ 1mA, 10A
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:70 @ 10mA, 5V
  • Power - Max:800 mW
  • Frequency - Transition:120MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-226-3, TO-92-3 Long Body
  • Supplier Device Package:TO-92MOD

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