IGB01N120H2ATMA1

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Manufacturer Part
IGB01N120H2ATMA1
Manufacturer
IR (Infineon Technologies)
Description
IGBT 1200V 3.2A 28W TO263-3-2
Category
Discrete Semiconductor Products
Family
Transistors - IGBTs - Single
Series
-
In Stock
0
Datasheets
-

IGB01N120H2ATMA1 Specifications

  • Series:-
  • Package:Tape & Reel (TR)
  • Part Status:Last Time Buy
  • IGBT Type:-
  • Voltage - Collector Emitter Breakdown (Max):1200 V
  • Current - Collector (Ic) (Max):3.2 A
  • Current - Collector Pulsed (Icm):3.5 A
  • Vce(on) (Max) @ Vge, Ic:2.8V @ 15V, 1A
  • Power - Max:28 W
  • Switching Energy:140µJ
  • Input Type:Standard
  • Gate Charge:8.6 nC
  • Td (on/off) @ 25°C:13ns/370ns
  • Test Condition:800V, 1A, 241Ohm, 15V
  • Reverse Recovery Time (trr):-
  • Operating Temperature:-40°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package:PG-TO263-3-2

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