SSM6H19NU,LF Specifications

• Series:U-MOSVII-H
• Package:Tape & Reel (TR)Cut Tape (CT)
• Part Status:Active
• FET Type:N-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):40 V
• Current - Continuous Drain (Id) @ 25°C:2A (Ta)
• Drive Voltage (Max Rds On, Min Rds On):1.8V, 8V
• Rds On (Max) @ Id, Vgs:185mOhm @ 1A, 8V
• Vgs(th) (Max) @ Id:1.2V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs:2.2 nC @ 4.2 V
• Vgs (Max):±12V
• Input Capacitance (Ciss) (Max) @ Vds:130 pF @ 10 V
• FET Feature:-
• Power Dissipation (Max):1W (Ta)
• Operating Temperature:150°C (TJ)
• Mounting Type:Surface Mount
• Supplier Device Package:6-UDFN (2x2)
• Package / Case:6-UDFN Exposed Pad