TP89R103NL,LQ Specifications

• Series:U-MOSVIII-H
• Package:Tape & Reel (TR)Cut Tape (CT)
• Part Status:Active
• FET Type:N-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):30 V
• Current - Continuous Drain (Id) @ 25°C:15A (Tc)
• Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
• Rds On (Max) @ Id, Vgs:9.1mOhm @ 7.5A, 10V
• Vgs(th) (Max) @ Id:2.3V @ 100µA
• Gate Charge (Qg) (Max) @ Vgs:9.8 nC @ 10 V
• Vgs (Max):±20V
• Input Capacitance (Ciss) (Max) @ Vds:820 pF @ 15 V
• FET Feature:-
• Power Dissipation (Max):1W (Tc)
• Operating Temperature:150°C (TJ)
• Mounting Type:Surface Mount
• Supplier Device Package:8-SOP
• Package / Case:8-SOIC (0.154", 3.90mm Width)