TK10V60W,LVQ Specifications

• Series:DTMOSIV
• Package:Tape & Reel (TR)Cut Tape (CT)
• Part Status:Active
• FET Type:N-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):600 V
• Current - Continuous Drain (Id) @ 25°C:9.7A (Ta)
• Drive Voltage (Max Rds On, Min Rds On):10V
• Rds On (Max) @ Id, Vgs:380mOhm @ 4.9A, 10V
• Vgs(th) (Max) @ Id:3.7V @ 500µA
• Gate Charge (Qg) (Max) @ Vgs:20 nC @ 10 V
• Vgs (Max):±30V
• Input Capacitance (Ciss) (Max) @ Vds:700 pF @ 300 V
• FET Feature:Super Junction
• Power Dissipation (Max):88.3W (Tc)
• Operating Temperature:150°C (TJ)
• Mounting Type:Surface Mount
• Supplier Device Package:4-DFN-EP (8x8)
• Package / Case:4-VSFN Exposed Pad