TJ10S04M3L(T6L1,NQ Specifications

• Series:U-MOSVI
• Package:Tape & Reel (TR)
• Part Status:Active
• FET Type:P-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):40 V
• Current - Continuous Drain (Id) @ 25°C:10A (Ta)
• Drive Voltage (Max Rds On, Min Rds On):6V, 10V
• Rds On (Max) @ Id, Vgs:44mOhm @ 5A, 10V
• Vgs(th) (Max) @ Id:3V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs:19 nC @ 10 V
• Vgs (Max):+10V, -20V
• Input Capacitance (Ciss) (Max) @ Vds:930 pF @ 10 V
• FET Feature:-
• Power Dissipation (Max):27W (Tc)
• Operating Temperature:175°C (TJ)
• Mounting Type:Surface Mount
• Supplier Device Package:DPAK+
• Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63