APT1003RSFLLG/TR Specifications

• Series:POWER MOS 7®
• Package:Tape & Reel (TR)Cut Tape (CT)
• Part Status:Active
• FET Type:N-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):1 kV
• Current - Continuous Drain (Id) @ 25°C:4A (Tc)
• Drive Voltage (Max Rds On, Min Rds On):10V
• Rds On (Max) @ Id, Vgs:3Ohm @ 2A, 10V
• Vgs(th) (Max) @ Id:5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs:34 nC @ 10 V
• Vgs (Max):±30V
• Input Capacitance (Ciss) (Max) @ Vds:694 pF/m @ 25 V
• FET Feature:-
• Power Dissipation (Max):139W (Tc)
• Operating Temperature:-55°C ~ 150°C (TJ)
• Mounting Type:Surface Mount
• Supplier Device Package:D3PAK
• Package / Case:TO-268-3, D³Pak (2 Leads + Tab), TO-268AA