TPC8129,LQ(S Specifications

• Series:U-MOSVI
• Package:Tape & Reel (TR)
• Part Status:Active
• FET Type:P-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):30 V
• Current - Continuous Drain (Id) @ 25°C:9A (Ta)
• Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
• Rds On (Max) @ Id, Vgs:22mOhm @ 4.5A, 10V
• Vgs(th) (Max) @ Id:2V @ 200µA
• Gate Charge (Qg) (Max) @ Vgs:39 nC @ 10 V
• Vgs (Max):+20V, -25V
• Input Capacitance (Ciss) (Max) @ Vds:1650 pF @ 10 V
• FET Feature:-
• Power Dissipation (Max):1W (Ta)
• Operating Temperature:150°C (TJ)
• Mounting Type:Surface Mount
• Supplier Device Package:8-SOP
• Package / Case:8-SOIC (0.154", 3.90mm Width)