AOW11S65 Specifications

• Series:aMOS™
• Package:Tube
• Part Status:Not For New Designs
• FET Type:N-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):650 V
• Current - Continuous Drain (Id) @ 25°C:11A (Tc)
• Drive Voltage (Max Rds On, Min Rds On):10V
• Rds On (Max) @ Id, Vgs:399mOhm @ 5.5A, 10V
• Vgs(th) (Max) @ Id:4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs:13.2 nC @ 10 V
• Vgs (Max):±30V
• Input Capacitance (Ciss) (Max) @ Vds:646 pF @ 100 V
• FET Feature:-
• Power Dissipation (Max):198W (Tc)
• Operating Temperature:-55°C ~ 150°C (TJ)
• Mounting Type:Through Hole
• Supplier Device Package:TO-262
• Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA