IXFN50N80Q2 Specifications

• Series:HiPerFET™
• Package:Tube
• Part Status:Not For New Designs
• FET Type:N-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):800 V
• Current - Continuous Drain (Id) @ 25°C:50A (Tc)
• Drive Voltage (Max Rds On, Min Rds On):10V
• Rds On (Max) @ Id, Vgs:160mOhm @ 500mA, 10V
• Vgs(th) (Max) @ Id:5.5V @ 8mA
• Gate Charge (Qg) (Max) @ Vgs:260 nC @ 10 V
• Vgs (Max):±30V
• Input Capacitance (Ciss) (Max) @ Vds:13500 pF @ 25 V
• FET Feature:-
• Power Dissipation (Max):1135W (Tc)
• Operating Temperature:-55°C ~ 150°C (TJ)
• Mounting Type:Chassis Mount
• Supplier Device Package:SOT-227B
• Package / Case:SOT-227-4, miniBLOC