HN1C01FU-GR,LF

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Manufacturer Part
HN1C01FU-GR,LF
Manufacturer
Toshiba Electronic Devices and Storage Corporation
Description
TRANS 2NPN 50V 0.15A US6
Category
Discrete Semiconductor Products
Family
Transistors - Bipolar (BJT) - Arrays
Series
-
In Stock
0
Datasheets
-

HN1C01FU-GR,LF Specifications

  • Series:-
  • Package:Tape & Reel (TR)Cut Tape (CT)
  • Part Status:Active
  • Transistor Type:2 NPN (Dual)
  • Current - Collector (Ic) (Max):150mA
  • Voltage - Collector Emitter Breakdown (Max):50V
  • Vce Saturation (Max) @ Ib, Ic:250mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:200 @ 2mA, 6V
  • Power - Max:200mW
  • Frequency - Transition:80MHz
  • Operating Temperature:125°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:6-TSSOP, SC-88, SOT-363
  • Supplier Device Package:US6

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