FF200R12KT3EHOSA1

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Manufacturer Part
FF200R12KT3EHOSA1
Manufacturer
Rochester Electronics
Description
FF200R12 - IGBT MODULE
Category
Discrete Semiconductor Products
Family
Transistors - IGBTs - Modules
Series
-
In Stock
4
Datasheets
-

FF200R12KT3EHOSA1 Specifications

  • Series:-
  • Package:Bulk
  • Part Status:Active
  • IGBT Type:-
  • Configuration:2 Independent
  • Voltage - Collector Emitter Breakdown (Max):1.2 V
  • Current - Collector (Ic) (Max):-
  • Power - Max:1.05 W
  • Vce(on) (Max) @ Vge, Ic:2.15V @ 15V, 200A
  • Current - Collector Cutoff (Max):5 mA
  • Input Capacitance (Cies) @ Vce:14 nF @ 25 V
  • Input:Standard
  • NTC Thermistor:No
  • Operating Temperature:-40°C ~ 125°C
  • Mounting Type:Chassis Mount
  • Package / Case:Module
  • Supplier Device Package:Module

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