DRA2123Y0L

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Manufacturer Part
DRA2123Y0L
Manufacturer
Panasonic
Description
TRANS PREBIAS PNP 200MW MINI3
Category
Discrete Semiconductor Products
Family
Transistors - Bipolar (BJT) - Single, Pre-Biased
Series
-
In Stock
2942
Datasheets
-

DRA2123Y0L Specifications

  • Series:-
  • Package:Tape & Reel (TR)Cut Tape (CT)
  • Part Status:Discontinued at Digi-Key
  • Transistor Type:PNP - Pre-Biased
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Resistor - Base (R1):2.2 kOhms
  • Resistor - Emitter Base (R2):10 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:30 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic:250mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max):500nA
  • Frequency - Transition:-
  • Power - Max:200 mW
  • Mounting Type:Surface Mount
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package:Mini3-G3-B

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