CSD86356Q5DT Specifications

• Series:NexFET™
• Package:Tape & Reel (TR)Cut Tape (CT)
• Part Status:Active
• FET Type:2 N-Channel (Half Bridge)
• FET Feature:Logic Level Gate, 5V Drive
• Drain to Source Voltage (Vdss):25V
• Current - Continuous Drain (Id) @ 25°C:40A (Ta)
• Rds On (Max) @ Id, Vgs:4.5mOhm @ 20A, 5V, 0.8mOhm @ 20A, 5V
• Vgs(th) (Max) @ Id:1.85V @ 250µA, 1.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs:7.9nC @ 4.5V, 19.3nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds:1.04nF @ 12.5V, 2.51nF @ 12.5V
• Power - Max:12W (Ta)
• Operating Temperature:-55°C ~ 150°C (TJ)
• Mounting Type:Surface Mount
• Package / Case:8-PowerTDFN
• Supplier Device Package:8-VSON-CLIP (5x6)