SIZ998BDT-T1-GE3 Specifications

• Series:TrenchFET® Gen IV
• Package:Tape & Reel (TR)Cut Tape (CT)
• Part Status:Active
• FET Type:2 N-Channel (Dual), Schottky
• FET Feature:Standard
• Drain to Source Voltage (Vdss):30V
• Current - Continuous Drain (Id) @ 25°C:23.7A (Ta), 54.8A (Tc), 36.2A (Ta), 94.6A (Tc)
• Rds On (Max) @ Id, Vgs:4.39mOhm @ 15A, 10V, 2.4mOhm @ 19A, 10V
• Vgs(th) (Max) @ Id:2.2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs:18nC @ 10V, 46.7nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds:790pF @ 15V, 2130pF @ 15V
• Power - Max:3.8W (Ta), 20W (Tc), 4.8W (Ta), 32.9W (Tc)
• Operating Temperature:-55°C ~ 150°C (TJ)
• Mounting Type:Surface Mount
• Package / Case:8-PowerPair™
• Supplier Device Package:8-PowerPair™