SIZF906DT-T1-GE3 Specifications

• Series:TrenchFET® Gen IV
• Package:Tape & Reel (TR)Cut Tape (CT)
• Part Status:Active
• FET Type:2 N-Channel (Half Bridge)
• FET Feature:Standard
• Drain to Source Voltage (Vdss):30V
• Current - Continuous Drain (Id) @ 25°C:60A (Tc)
• Rds On (Max) @ Id, Vgs:3.8mOhm @ 15A, 10V, 1.17mOhm @ 20A, 10V
• Vgs(th) (Max) @ Id:2.2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs:22nC @ 4.5V, 92nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds:2000pF @ 15V, 8200pF @ 15V
• Power - Max:38W (Tc), 83W (Tc)
• Operating Temperature:-55°C ~ 150°C (TA)
• Mounting Type:Surface Mount
• Package / Case:8-PowerWDFN
• Supplier Device Package:8-PowerPair® (6x5)