NESG2101M05-T1-A

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Manufacturer Part
NESG2101M05-T1-A
Manufacturer
Rochester Electronics
Description
NESG2101 - NPN SIGE RF TRANSISTO
Category
Discrete Semiconductor Products
Family
Transistors - Bipolar (BJT) - RF
Series
-
In Stock
9000
Datasheets
-

NESG2101M05-T1-A Specifications

  • Series:-
  • Package:Bulk
  • Part Status:Obsolete
  • Transistor Type:NPN
  • Voltage - Collector Emitter Breakdown (Max):5V
  • Frequency - Transition:17GHz
  • Noise Figure (dB Typ @ f):0.6dB ~ 1.2dB @ 1GHz ~ 2GHz
  • Gain:11dB ~ 19dB
  • Power - Max:500mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce:130 @ 15mA, 2V
  • Current - Collector (Ic) (Max):100mA
  • Operating Temperature:-
  • Mounting Type:Surface Mount
  • Package / Case:SOT-343F
  • Supplier Device Package:M05

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