MMBTH10LT1G

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Manufacturer Part
MMBTH10LT1G
Manufacturer
Rochester Electronics
Description
RF SMALL SIGNAL BIPOLAR TRANSIST
Category
Discrete Semiconductor Products
Family
Transistors - Bipolar (BJT) - RF
Series
-
In Stock
2375455
Datasheets
-

MMBTH10LT1G Specifications

  • Series:-
  • Package:Bulk
  • Part Status:Active
  • Transistor Type:NPN
  • Voltage - Collector Emitter Breakdown (Max):25V
  • Frequency - Transition:650MHz
  • Noise Figure (dB Typ @ f):-
  • Gain:-
  • Power - Max:225mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce:60 @ 4mA, 10V
  • Current - Collector (Ic) (Max):-
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package:SOT-23-3 (TO-236)

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