BFR750L3RHE6327

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Manufacturer Part
BFR750L3RHE6327
Manufacturer
Rochester Electronics
Description
RF BIPOLAR TRANSISTOR
Category
Discrete Semiconductor Products
Family
Transistors - Bipolar (BJT) - RF
Series
-
In Stock
38248
Datasheets
-

BFR750L3RHE6327 Specifications

  • Series:-
  • Package:Bulk
  • Part Status:Active
  • Transistor Type:NPN
  • Voltage - Collector Emitter Breakdown (Max):4.7V
  • Frequency - Transition:37GHz
  • Noise Figure (dB Typ @ f):0.6dB ~ 1.1dB @ 1.8GHz ~ 6GHz
  • Gain:21dB
  • Power - Max:360mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce:160 @ 60mA, 3V
  • Current - Collector (Ic) (Max):90mA
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:SC-101, SOT-883
  • Supplier Device Package:PG-TSLP-3

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Inquiry

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