BFR193WE6327

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Manufacturer Part
BFR193WE6327
Manufacturer
Rochester Electronics
Description
HIGH LINEARITY TRANSISTOR
Category
Discrete Semiconductor Products
Family
Transistors - Bipolar (BJT) - RF
Series
-
In Stock
3000
Datasheets
-

BFR193WE6327 Specifications

  • Series:-
  • Package:Bulk
  • Part Status:Active
  • Transistor Type:NPN
  • Voltage - Collector Emitter Breakdown (Max):12V
  • Frequency - Transition:8GHz
  • Noise Figure (dB Typ @ f):1dB ~ 1.6dB @ 900MHz ~ 1.8GHz
  • Gain:10.5dB ~ 16dB
  • Power - Max:580mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce:70 @ 30mA, 8V
  • Current - Collector (Ic) (Max):80mA
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:SC-70, SOT-323
  • Supplier Device Package:PG-SOT323-3

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Inquiry

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