WNSC06650T6J

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Manufacturer Part
WNSC06650T6J
Manufacturer
WeEn Semiconductors Co., Ltd
Description
SILICON CARBIDE POWER DIODE
Category
Discrete Semiconductor Products
Family
Diodes - Rectifiers - Single
Series
-
In Stock
3000
Datasheets
-

WNSC06650T6J Specifications

  • Series:-
  • Package:Tape & Reel (TR)Cut Tape (CT)
  • Part Status:Active
  • Diode Type:Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max):650 V
  • Current - Average Rectified (Io):6A
  • Voltage - Forward (Vf) (Max) @ If:1.7 V @ 6 A
  • Speed:No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr):0 ns
  • Current - Reverse Leakage @ Vr:40 µA @ 650 V
  • Capacitance @ Vr, F:190pF @ 1V, 1MHz
  • Mounting Type:Surface Mount
  • Package / Case:4-VDFN Exposed Pad
  • Supplier Device Package:5-DFN (8x8)
  • Operating Temperature - Junction:175°C (Max)

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