NXPSC08650B6J

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Manufacturer Part
NXPSC08650B6J
Manufacturer
WeEn Semiconductors Co., Ltd
Description
DIODE SCHOTTKY 650V 8A D2PAK
Category
Discrete Semiconductor Products
Family
Diodes - Rectifiers - Single
Series
-
In Stock
3200
Datasheets
-

NXPSC08650B6J Specifications

  • Series:-
  • Package:Tape & Reel (TR)Cut Tape (CT)
  • Part Status:Active
  • Diode Type:Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max):650 V
  • Current - Average Rectified (Io):8A
  • Voltage - Forward (Vf) (Max) @ If:1.7 V @ 8 A
  • Speed:No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr):0 ns
  • Current - Reverse Leakage @ Vr:230 µA @ 650 V
  • Capacitance @ Vr, F:260pF @ 1V, 1MHz
  • Mounting Type:Surface Mount
  • Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package:D2PAK
  • Operating Temperature - Junction:175°C (Max)

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Products Category

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Daily Order Quantity

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15,000 ㎡

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