IRG8P08N120KD-EPBF

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Manufacturer Part
IRG8P08N120KD-EPBF
Manufacturer
Rochester Electronics
Description
IRG8P08N120 - DISCRETE IGBT WITH
Category
Discrete Semiconductor Products
Family
Transistors - IGBTs - Single
Series
-
In Stock
12000
Datasheets
-

IRG8P08N120KD-EPBF Specifications

  • Series:-
  • Package:Bulk
  • Part Status:Obsolete
  • IGBT Type:-
  • Voltage - Collector Emitter Breakdown (Max):1.2 V
  • Current - Collector (Ic) (Max):15 A
  • Current - Collector Pulsed (Icm):15 A
  • Vce(on) (Max) @ Vge, Ic:2V @ 15V, 5A
  • Power - Max:89 W
  • Switching Energy:300µJ (on), 300µJ (off)
  • Input Type:Standard
  • Gate Charge:45 nC
  • Td (on/off) @ 25°C:20ns/160ns
  • Test Condition:600V, 5A, 47Ohm, 15V
  • Reverse Recovery Time (trr):50 ns
  • Operating Temperature:-40°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-247-3
  • Supplier Device Package:TO-247AD

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