TPN4R712MD,L1Q Specifications

• Series:U-MOSVI
• Package:Tape & Reel (TR)Cut Tape (CT)
• Part Status:Active
• FET Type:P-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):20 V
• Current - Continuous Drain (Id) @ 25°C:36A (Tc)
• Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V
• Rds On (Max) @ Id, Vgs:4.7mOhm @ 18A, 4.5V
• Vgs(th) (Max) @ Id:1.2V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs:65 nC @ 5 V
• Vgs (Max):±12V
• Input Capacitance (Ciss) (Max) @ Vds:4300 pF @ 10 V
• FET Feature:-
• Power Dissipation (Max):42W (Tc)
• Operating Temperature:150°C (TJ)
• Mounting Type:Surface Mount
• Supplier Device Package:8-TSON Advance (3.3x3.3)
• Package / Case:8-PowerVDFN