BSH103,215 Specifications

• Series:-
• Package:Tape & Reel (TR)Cut Tape (CT)
• Part Status:Not For New Designs
• FET Type:N-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):30 V
• Current - Continuous Drain (Id) @ 25°C:850mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On):2.5V
• Rds On (Max) @ Id, Vgs:400mOhm @ 500mA, 4.5V
• Vgs(th) (Max) @ Id:400mV @ 1mA (Min)
• Gate Charge (Qg) (Max) @ Vgs:2.1 nC @ 4.5 V
• Vgs (Max):±8V
• Input Capacitance (Ciss) (Max) @ Vds:83 pF @ 24 V
• FET Feature:-
• Power Dissipation (Max):540mW (Ta)
• Operating Temperature:-55°C ~ 150°C (TJ)
• Mounting Type:Surface Mount
• Supplier Device Package:TO-236AB
• Package / Case:TO-236-3, SC-59, SOT-23-3