DMN1019USN-13 Specifications

• Series:-
• Package:Tape & Reel (TR)Cut Tape (CT)
• Part Status:Active
• FET Type:N-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):12 V
• Current - Continuous Drain (Id) @ 25°C:9.3A (Ta)
• Drive Voltage (Max Rds On, Min Rds On):1.2V, 2.5V
• Rds On (Max) @ Id, Vgs:10mOhm @ 9.7A, 4.5V
• Vgs(th) (Max) @ Id:800mV @ 250µA
• Gate Charge (Qg) (Max) @ Vgs:50.6 nC @ 8 V
• Vgs (Max):±8V
• Input Capacitance (Ciss) (Max) @ Vds:2426 pF @ 10 V
• FET Feature:-
• Power Dissipation (Max):680mW (Ta)
• Operating Temperature:-55°C ~ 150°C (TJ)
• Mounting Type:Surface Mount
• Supplier Device Package:SC-59
• Package / Case:TO-236-3, SC-59, SOT-23-3