SSM6K514NU,LF Specifications

• Series:U-MOSIX-H
• Package:Tape & Reel (TR)Cut Tape (CT)
• Part Status:Active
• FET Type:N-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):40 V
• Current - Continuous Drain (Id) @ 25°C:12A (Ta)
• Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
• Rds On (Max) @ Id, Vgs:11.6mOhm @ 4A, 10V
• Vgs(th) (Max) @ Id:2.4V @ 100µA
• Gate Charge (Qg) (Max) @ Vgs:7.5 nC @ 4.5 V
• Vgs (Max):±20V
• Input Capacitance (Ciss) (Max) @ Vds:1110 pF @ 20 V
• FET Feature:-
• Power Dissipation (Max):2.5W (Ta)
• Operating Temperature:150°C
• Mounting Type:Surface Mount
• Supplier Device Package:6-UDFNB (2x2)
• Package / Case:6-WDFN Exposed Pad