MMIX1F160N30T Specifications

• Series:GigaMOS™, HiPerFET™, TrenchT2™
• Package:Tube
• Part Status:Active
• FET Type:N-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):300 V
• Current - Continuous Drain (Id) @ 25°C:102A (Tc)
• Drive Voltage (Max Rds On, Min Rds On):10V
• Rds On (Max) @ Id, Vgs:20mOhm @ 60A, 10V
• Vgs(th) (Max) @ Id:5V @ 8mA
• Gate Charge (Qg) (Max) @ Vgs:335 nC @ 10 V
• Vgs (Max):±20V
• Input Capacitance (Ciss) (Max) @ Vds:2800 pF @ 25 V
• FET Feature:-
• Power Dissipation (Max):570W (Tc)
• Operating Temperature:-55°C ~ 150°C (TJ)
• Mounting Type:Surface Mount
• Supplier Device Package:24-SMPD
• Package / Case:24-PowerSMD, 21 Leads