TPH9R506PL,LQ Specifications

• Series:U-MOSIX-H
• Package:Tape & Reel (TR)Cut Tape (CT)
• Part Status:Active
• FET Type:N-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):60 V
• Current - Continuous Drain (Id) @ 25°C:34A (Tc)
• Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
• Rds On (Max) @ Id, Vgs:9.5mOhm @ 17A, 10V
• Vgs(th) (Max) @ Id:2.5V @ 200µA
• Gate Charge (Qg) (Max) @ Vgs:21 nC @ 10 V
• Vgs (Max):±20V
• Input Capacitance (Ciss) (Max) @ Vds:1910 pF @ 30 V
• FET Feature:-
• Power Dissipation (Max):830mW (Ta), 81W (Tc)
• Operating Temperature:175°C
• Mounting Type:Surface Mount
• Supplier Device Package:8-SOP Advance (5x5)
• Package / Case:8-PowerVDFN