TPW4R50ANH,L1Q Specifications

• Series:U-MOSVIII-H
• Package:Tape & Reel (TR)Cut Tape (CT)
• Part Status:Active
• FET Type:N-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):100 V
• Current - Continuous Drain (Id) @ 25°C:92A (Tc)
• Drive Voltage (Max Rds On, Min Rds On):10V
• Rds On (Max) @ Id, Vgs:4.5mOhm @ 46A, 10V
• Vgs(th) (Max) @ Id:4V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs:58 nC @ 10 V
• Vgs (Max):±20V
• Input Capacitance (Ciss) (Max) @ Vds:5200 pF @ 50 V
• FET Feature:-
• Power Dissipation (Max):800mW (Ta), 142W (Tc)
• Operating Temperature:150°C (TJ)
• Mounting Type:Surface Mount
• Supplier Device Package:8-DSOP Advance
• Package / Case:8-PowerVDFN