BSS209PWH6327XTSA1 Specifications

• Series:OptiMOS™
• Package:Tape & Reel (TR)Cut Tape (CT)
• Part Status:Active
• FET Type:P-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):20 V
• Current - Continuous Drain (Id) @ 25°C:630mA (Tc)
• Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V
• Rds On (Max) @ Id, Vgs:550mOhm @ 630mA, 4.5V
• Vgs(th) (Max) @ Id:1.2V @ 3.5µA
• Gate Charge (Qg) (Max) @ Vgs:1.3 nC @ 4.5 V
• Vgs (Max):±12V
• Input Capacitance (Ciss) (Max) @ Vds:115 pF @ 15 V
• FET Feature:-
• Power Dissipation (Max):300mW (Ta)
• Operating Temperature:-55°C ~ 150°C (TJ)
• Mounting Type:Surface Mount
• Supplier Device Package:PG-SOT323-3
• Package / Case:SC-70, SOT-323