FJ4B01110L1 Specifications

• Series:-
• Package:Tape & Reel (TR)Cut Tape (CT)
• Part Status:Active
• FET Type:P-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):12 V
• Current - Continuous Drain (Id) @ 25°C:1.4A (Ta)
• Drive Voltage (Max Rds On, Min Rds On):1.5V, 4.5V
• Rds On (Max) @ Id, Vgs:153mOhm @ 700mA, 4.5V
• Vgs(th) (Max) @ Id:1V @ 598µA
• Gate Charge (Qg) (Max) @ Vgs:3.3 nC @ 4.5 V
• Vgs (Max):±8V
• Input Capacitance (Ciss) (Max) @ Vds:226 pF @ 10 V
• FET Feature:-
• Power Dissipation (Max):340mW (Ta)
• Operating Temperature:-40°C ~ 85°C (TA)
• Mounting Type:Surface Mount
• Supplier Device Package:ALGA004-W-0606-RA01
• Package / Case:4-XFLGA, CSP