IPN60R3K4CEATMA1 Specifications

• Series:CoolMOS™
• Package:Tape & Reel (TR)Cut Tape (CT)
• Part Status:Active
• FET Type:N-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):600 V
• Current - Continuous Drain (Id) @ 25°C:2.6A (Tc)
• Drive Voltage (Max Rds On, Min Rds On):10V
• Rds On (Max) @ Id, Vgs:3.4Ohm @ 500mA, 10V
• Vgs(th) (Max) @ Id:3.5V @ 40µA
• Gate Charge (Qg) (Max) @ Vgs:4.6 nC @ 10 V
• Vgs (Max):±20V
• Input Capacitance (Ciss) (Max) @ Vds:93 pF @ 100 V
• FET Feature:Super Junction
• Power Dissipation (Max):5W (Tc)
• Operating Temperature:-40°C ~ 150°C (TJ)
• Mounting Type:Surface Mount
• Supplier Device Package:PG-SOT223
• Package / Case:SOT-223-3