SI2319DDS-T1-GE3 Specifications

• Series:TrenchFET® Gen III
• Package:Tape & Reel (TR)Cut Tape (CT)
• Part Status:Active
• FET Type:P-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):40 V
• Current - Continuous Drain (Id) @ 25°C:2.7A (Ta), 3.6A (Tc)
• Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
• Rds On (Max) @ Id, Vgs:75mOhm @ 2.7A, 10V
• Vgs(th) (Max) @ Id:2.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs:19 nC @ 10 V
• Vgs (Max):±20V
• Input Capacitance (Ciss) (Max) @ Vds:650 pF @ 20 V
• FET Feature:-
• Power Dissipation (Max):1W (Ta), 1.7W (Tc)
• Operating Temperature:-55°C ~ 150°C (TJ)
• Mounting Type:Surface Mount
• Supplier Device Package:SOT-23-3 (TO-236)
• Package / Case:TO-236-3, SC-59, SOT-23-3