SQ3419AEEV-T1_GE3 Specifications

• Series:Automotive, AEC-Q101, TrenchFET®
• Package:Tape & Reel (TR)Cut Tape (CT)
• Part Status:Active
• FET Type:P-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):40 V
• Current - Continuous Drain (Id) @ 25°C:6.9A (Tc)
• Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
• Rds On (Max) @ Id, Vgs:61mOhm @ 2.5A, 10V
• Vgs(th) (Max) @ Id:2.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs:12.5 nC @ 4.5 V
• Vgs (Max):±12V
• Input Capacitance (Ciss) (Max) @ Vds:975 pF @ 20 V
• FET Feature:-
• Power Dissipation (Max):5W (Tc)
• Operating Temperature:-55°C ~ 175°C (TJ)
• Mounting Type:Surface Mount
• Supplier Device Package:6-TSOP
• Package / Case:SOT-23-6 Thin, TSOT-23-6