FDD8N50NZTM Specifications

• Series:UniFET-II™
• Package:Tape & Reel (TR)Cut Tape (CT)
• Part Status:Active
• FET Type:N-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):500 V
• Current - Continuous Drain (Id) @ 25°C:6.5A (Tc)
• Drive Voltage (Max Rds On, Min Rds On):10V
• Rds On (Max) @ Id, Vgs:850mOhm @ 3.25A, 10V
• Vgs(th) (Max) @ Id:5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs:18 nC @ 10 V
• Vgs (Max):±25V
• Input Capacitance (Ciss) (Max) @ Vds:735 pF @ 25 V
• FET Feature:-
• Power Dissipation (Max):90W (Tc)
• Operating Temperature:-55°C ~ 150°C (TJ)
• Mounting Type:Surface Mount
• Supplier Device Package:DPAK
• Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63