IQE013N04LM6ATMA1 Specifications

• Series:OptiMOS™
• Package:Tape & Reel (TR)Cut Tape (CT)
• Part Status:Active
• FET Type:N-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):40 V
• Current - Continuous Drain (Id) @ 25°C:31A (Ta), 205A (Tc)
• Drive Voltage (Max Rds On, Min Rds On):-
• Rds On (Max) @ Id, Vgs:1.35mOhm @ 20A, 10V
• Vgs(th) (Max) @ Id:2V @ 51µA
• Gate Charge (Qg) (Max) @ Vgs:55 nC @ 10 V
• Vgs (Max):±20V
• Input Capacitance (Ciss) (Max) @ Vds:3900 pF @ 20 V
• FET Feature:-
• Power Dissipation (Max):2.5W (Ta), 107W (Tc)
• Operating Temperature:-55°C ~ 175°C (TJ)
• Mounting Type:Surface Mount, Wettable Flank
• Supplier Device Package:PG-TSON-8-4
• Package / Case:8-PowerTDFN