CSD19538Q2T Specifications

• Series:NexFET™
• Package:Tape & Reel (TR)Cut Tape (CT)
• Part Status:Active
• FET Type:N-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):100 V
• Current - Continuous Drain (Id) @ 25°C:13.1A (Tc)
• Drive Voltage (Max Rds On, Min Rds On):6V, 10V
• Rds On (Max) @ Id, Vgs:59mOhm @ 5A, 10V
• Vgs(th) (Max) @ Id:3.8V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs:5.6 nC @ 10 V
• Vgs (Max):±20V
• Input Capacitance (Ciss) (Max) @ Vds:454 pF @ 50 V
• FET Feature:-
• Power Dissipation (Max):2.5W (Ta), 20.2W (Tc)
• Operating Temperature:-55°C ~ 150°C (TJ)
• Mounting Type:Surface Mount
• Supplier Device Package:6-WSON (2x2)
• Package / Case:6-WDFN Exposed Pad