TK160F10N1,LXGQ Specifications

• Series:U-MOSVIII-H
• Package:Tape & Reel (TR)Cut Tape (CT)
• Part Status:Not For New Designs
• FET Type:N-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):100 V
• Current - Continuous Drain (Id) @ 25°C:160A (Ta)
• Drive Voltage (Max Rds On, Min Rds On):10V
• Rds On (Max) @ Id, Vgs:2.4mOhm @ 80A, 10V
• Vgs(th) (Max) @ Id:4V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs:121 nC @ 10 V
• Vgs (Max):±20V
• Input Capacitance (Ciss) (Max) @ Vds:8510 pF @ 10 V
• FET Feature:-
• Power Dissipation (Max):375W (Tc)
• Operating Temperature:175°C
• Mounting Type:Surface Mount
• Supplier Device Package:TO-220SM(W)
• Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB