SISS65DN-T1-GE3 Specifications

• Series:TrenchFET® Gen III
• Package:Tape & Reel (TR)Cut Tape (CT)
• Part Status:Active
• FET Type:P-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):30 V
• Current - Continuous Drain (Id) @ 25°C:25.9A (Ta), 94A (Tc)
• Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
• Rds On (Max) @ Id, Vgs:4.6mOhm @ 15A, 10V
• Vgs(th) (Max) @ Id:2.3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs:138 nC @ 10 V
• Vgs (Max):±20V
• Input Capacitance (Ciss) (Max) @ Vds:4930 pF @ 15 V
• FET Feature:-
• Power Dissipation (Max):5.1W (Ta), 65.8W (Tc)
• Operating Temperature:-55°C ~ 150°C (TJ)
• Mounting Type:Surface Mount
• Supplier Device Package:PowerPAK® 1212-8S (3.3x3.3)
• Package / Case:PowerPAK® 1212-8S