NVMFS5113PLT1G Specifications

• Series:-
• Package:Tape & Reel (TR)Cut Tape (CT)
• Part Status:Active
• FET Type:P-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):60 V
• Current - Continuous Drain (Id) @ 25°C:10A (Ta), 64A (Tc)
• Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
• Rds On (Max) @ Id, Vgs:14mOhm @ 17A, 10V
• Vgs(th) (Max) @ Id:2.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs:83 nC @ 10 V
• Vgs (Max):±20V
• Input Capacitance (Ciss) (Max) @ Vds:4400 pF @ 25 V
• FET Feature:-
• Power Dissipation (Max):3.8W (Ta), 150W (Tc)
• Operating Temperature:-55°C ~ 175°C (TJ)
• Mounting Type:Surface Mount
• Supplier Device Package:5-DFN (5x6) (8-SOFL)
• Package / Case:8-PowerTDFN