PMH850UPEH Specifications

• Series:Automotive, AEC-Q101, TrenchMOS™
• Package:Tape & Reel (TR)Cut Tape (CT)
• Part Status:Active
• FET Type:P-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):30 V
• Current - Continuous Drain (Id) @ 25°C:600mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On):1.5V, 4.5V
• Rds On (Max) @ Id, Vgs:1Ohm @ 500mA, 4.5V
• Vgs(th) (Max) @ Id:950mV @ 250µA
• Gate Charge (Qg) (Max) @ Vgs:900 pC @ 4.5 V
• Vgs (Max):±8V
• Input Capacitance (Ciss) (Max) @ Vds:62.2 pF @ 15 V
• FET Feature:-
• Power Dissipation (Max):660mW (Ta), 2.23W (Tc)
• Operating Temperature:-55°C ~ 150°C (TJ)
• Mounting Type:Surface Mount
• Supplier Device Package:DFN0606-3 (SOT8001)
• Package / Case:3-XFDFN