IRLML6302GTRPBF Specifications

• Series:HEXFET®
• Package:Bulk
• Part Status:Active
• FET Type:P-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):20 V
• Current - Continuous Drain (Id) @ 25°C:780mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On):2.7V, 4.5V
• Rds On (Max) @ Id, Vgs:600mOhm @ 610mA, 4.5V
• Vgs(th) (Max) @ Id:1.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs:3.6 nC @ 4.5 V
• Vgs (Max):±12V
• Input Capacitance (Ciss) (Max) @ Vds:97 pF @ 15 V
• FET Feature:-
• Power Dissipation (Max):540mW (Ta)
• Operating Temperature:-55°C ~ 150°C (TJ)
• Mounting Type:Surface Mount
• Supplier Device Package:Micro3™/SOT-23
• Package / Case:TO-236-3, SC-59, SOT-23-3