TPN1110ENH,L1Q Specifications

• Series:U-MOSVIII-H
• Package:Tape & Reel (TR)Cut Tape (CT)
• Part Status:Active
• FET Type:N-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):200 V
• Current - Continuous Drain (Id) @ 25°C:7.2A (Ta)
• Drive Voltage (Max Rds On, Min Rds On):10V
• Rds On (Max) @ Id, Vgs:114mOhm @ 3.6A, 10V
• Vgs(th) (Max) @ Id:4V @ 200µA
• Gate Charge (Qg) (Max) @ Vgs:7 nC @ 10 V
• Vgs (Max):±20V
• Input Capacitance (Ciss) (Max) @ Vds:600 pF @ 100 V
• FET Feature:-
• Power Dissipation (Max):700mW (Ta), 39W (Tc)
• Operating Temperature:150°C (TJ)
• Mounting Type:Surface Mount
• Supplier Device Package:8-TSON Advance (3.3x3.3)
• Package / Case:8-PowerVDFN