IXTN600N04T2 Specifications

• Series:GigaMOS™, TrenchT2™
• Package:Tube
• Part Status:Active
• FET Type:N-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):40 V
• Current - Continuous Drain (Id) @ 25°C:600A (Tc)
• Drive Voltage (Max Rds On, Min Rds On):10V
• Rds On (Max) @ Id, Vgs:1.05mOhm @ 100A, 10V
• Vgs(th) (Max) @ Id:3.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs:590 nC @ 10 V
• Vgs (Max):±20V
• Input Capacitance (Ciss) (Max) @ Vds:40000 pF @ 25 V
• FET Feature:-
• Power Dissipation (Max):940W (Tc)
• Operating Temperature:-55°C ~ 175°C (TJ)
• Mounting Type:Chassis Mount
• Supplier Device Package:SOT-227B
• Package / Case:SOT-227-4, miniBLOC