IRF6810STRPBF Specifications

• Series:HEXFET®
• Package:Bulk
• Part Status:Active
• FET Type:N-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):25 V
• Current - Continuous Drain (Id) @ 25°C:16A (Ta), 50A (Tc)
• Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
• Rds On (Max) @ Id, Vgs:5.2mOhm @ 16A, 10V
• Vgs(th) (Max) @ Id:2.1V @ 25µA
• Gate Charge (Qg) (Max) @ Vgs:11 nC @ 4.5 V
• Vgs (Max):±16V
• Input Capacitance (Ciss) (Max) @ Vds:1.038 pF @ 13 V
• FET Feature:-
• Power Dissipation (Max):2.1W (Ta), 20W (Tc)
• Operating Temperature:-40°C ~ 150°C (TJ)
• Mounting Type:Surface Mount
• Supplier Device Package:DIRECTFET S1
• Package / Case:DirectFET™ Isometric S1